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Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer

Identifieur interne : 001860 ( Main/Repository ); précédent : 001859; suivant : 001861

Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer

Auteurs : RBID : Pascal:12-0168289

Descripteurs français

Pascal (Inist)
- Dépôt chimique phase vapeur, Semiconducteur III-V, Composé III-V, Superréseau, Couche tampon, Méthode MOCVD, Accommodation réseau, Diffraction RX, Spectrométrie transformée Fourier, Modélisation, Etude théorique, Donnée expérimentale, Détection IR, Arséniure d'indium, Antimoniure de gallium, InAs, Substrat GaSb, Substrat GaAs, GaSb, 8115G, 8105E, 8105H.

English descriptors

KwdEn :
- Buffer layer, CVD, Experimental data, Fourier transform spectroscopy, Gallium antimonides, III-V compound, III-V semiconductors, Indium arsenides, Infrared detection, MOCVD, Mismatch lattice, Modelling, Superlattices, Theoretical study, XRD.

Abstract

InAs/GaSb type II superlattices (T2SLs) were grown heteroepitaxially, via metallorganic chemical vapor deposition (MOCVD), on GaAs substrates. The 7% lattice mismatch between the T2SL and GaAs substrate was accommodated through the use of a two-step InAs buffer layer. The periodicity of the grown structures was confirmed by X-ray diffraction (XRD). FTIR measurements of the structures yielded cutoff wavelength values from 4.9 μm to 8.7 μm, which, as expected, scaled with thickness of the InAs in the SL structure. Kronig-Penny modeling of the structures produced the general trend of the experimental data.

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Pascal:12-0168289

Le document en format XML

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<author><name sortKey="Barletta, Philip" uniqKey="Barletta P">Philip Barletta</name>
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<s2>NC, 27709-2194</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<placeName><region type="state">Caroline du Nord</region>
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<author><name sortKey="Bulman, Gary" uniqKey="Bulman G">Gary Bulman</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Solid State Energetics, RTI International, 3040 Cornwallis Rd, PO Box 12194, Research Triangle Park</s1>
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<author><name sortKey="Dezsi, Geza" uniqKey="Dezsi G">Geza Dezsi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Solid State Energetics, RTI International, 3040 Cornwallis Rd, PO Box 12194, Research Triangle Park</s1>
<s2>NC, 27709-2194</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<placeName><region type="state">Caroline du Nord</region>
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<author><name sortKey="Venkatasubramanian, Rama" uniqKey="Venkatasubramanian R">Rama Venkatasubramanian</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Solid State Energetics, RTI International, 3040 Cornwallis Rd, PO Box 12194, Research Triangle Park</s1>
<s2>NC, 27709-2194</s2>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term>
<term>CVD</term>
<term>Experimental data</term>
<term>Fourier transform spectroscopy</term>
<term>Gallium antimonides</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Infrared detection</term>
<term>MOCVD</term>
<term>Mismatch lattice</term>
<term>Modelling</term>
<term>Superlattices</term>
<term>Theoretical study</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt chimique phase vapeur</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Superréseau</term>
<term>Couche tampon</term>
<term>Méthode MOCVD</term>
<term>Accommodation réseau</term>
<term>Diffraction RX</term>
<term>Spectrométrie transformée Fourier</term>
<term>Modélisation</term>
<term>Etude théorique</term>
<term>Donnée expérimentale</term>
<term>Détection IR</term>
<term>Arséniure d'indium</term>
<term>Antimoniure de gallium</term>
<term>InAs</term>
<term>Substrat GaSb</term>
<term>Substrat GaAs</term>
<term>GaSb</term>
<term>8115G</term>
<term>8105E</term>
<term>8105H</term>
</keywords>
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<front><div type="abstract" xml:lang="en">InAs/GaSb type II superlattices (T2SLs) were grown heteroepitaxially, via metallorganic chemical vapor deposition (MOCVD), on GaAs substrates. The 7% lattice mismatch between the T2SL and GaAs substrate was accommodated through the use of a two-step InAs buffer layer. The periodicity of the grown structures was confirmed by X-ray diffraction (XRD). FTIR measurements of the structures yielded cutoff wavelength values from 4.9 μm to 8.7 μm, which, as expected, scaled with thickness of the InAs in the SL structure. Kronig-Penny modeling of the structures produced the general trend of the experimental data.</div>
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<fA11 i1="01" i2="1"><s1>BARLETTA (Philip)</s1>
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<fA14 i1="01"><s1>Center for Solid State Energetics, RTI International, 3040 Cornwallis Rd, PO Box 12194, Research Triangle Park</s1>
<s2>NC, 27709-2194</s2>
<s3>USA</s3>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>InAs/GaSb type II superlattices (T2SLs) were grown heteroepitaxially, via metallorganic chemical vapor deposition (MOCVD), on GaAs substrates. The 7% lattice mismatch between the T2SL and GaAs substrate was accommodated through the use of a two-step InAs buffer layer. The periodicity of the grown structures was confirmed by X-ray diffraction (XRD). FTIR measurements of the structures yielded cutoff wavelength values from 4.9 μm to 8.7 μm, which, as expected, scaled with thickness of the InAs in the SL structure. Kronig-Penny modeling of the structures produced the general trend of the experimental data.</s0>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>09</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Modelling</s0>
<s5>10</s5>
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<s5>11</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Detección IR</s0>
<s5>13</s5>
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<fC03 i1="14" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
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<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>Antimoniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium antimonides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Substrat GaSb</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>GaSb</s0>
<s4>INC</s4>
<s5>49</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>8115G</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8105H</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>129</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
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Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer

Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri